(a) Does the C2F6 flow rate affect the wafer-to-wafer variability in etch uniformity? Use = 0.05. (b) Draw box plots to assist in the interpretation of the data from this experiment
(a) Does the C2F6 flow rate affect the wafer-to-wafer variability in etch uniformity? Use = 0.05. (b) Draw box plots to assist in the interpretation of the data from this experiment
Principles of Instrumental Analysis
7th Edition
ISBN:9781305577213
Author:Douglas A. Skoog, F. James Holler, Stanley R. Crouch
Publisher:Douglas A. Skoog, F. James Holler, Stanley R. Crouch
Chapter21: Surface Characterization By Spectroscopy And Microscopy
Section: Chapter Questions
Problem 21.10QAP
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Question
An article in Solid State Technology, "Orthogonal Design of Process Optimization and Its Application to Plasma Etching" by G.Z. Yin and D.W. Jillie (May, 1987) describes an experiment to determine the effect of C2F6 flow rate on the uniformity of the etch on a silicon wafer used in integrated circuit manufacturing. Data for two flow rates are as follows:
C2F6 |
Uniformity Observation |
|||||
(SCCM) |
1 |
2 |
3 |
4 |
5 |
6 |
125 |
2.7 |
4.6 |
2.6 |
3.0 |
3.2 |
3.8 |
200 |
4.6 |
3.4 |
2.9 |
3.5 |
4.1 |
5.1 |
(a) Does the C2F6 flow rate affect the wafer-to-wafer variability in etch uniformity? Use = 0.05.
(b) Draw box plots to assist in the interpretation of the data from this experiment
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